By calculating the heterojunction band alignment of GeSn/SiGeSn, a Ge_0.9Sn_0.1/Si_0.14Ge_0.71Sn_0.15 multi-quantum-well laser was designed, where three Ge_0.9Sn_0.1 layers act as wells separated by three Si_0.14Ge_0.71Sn_0.15 layers as barriers. The maximum TE gain reaches 7000 cm⁻¹ at 0.5 eV, and the maximum TM gain reaches 5500 cm⁻¹ at 0.52 eV. The modal gain of the Ge_0.9Sn_0.1/Si_0.14Ge_0.71Sn_0.15 multi-quantum-well laser we proposed and designed can reach 100 cm⁻¹ with a current density of 5 kA/cm². The result indicates that it is possible to obtain a Si-based laser.

中文翻译：

---

硅基晶格匹配GeSn / SiGeSn多量子阱激光器的设计

通过计算GeSn / SiGeSn的异质结能带对准，Ge _{0 。9} Sn _{0 。1} / Si _{0 。14} Ge _{0 。71} Sn _{0 。设计了15个}多量子阱激光器，其中三个Ge _{0 。9} Sn _{0 。1}层充当由三个Si ₀隔开的阱_。14 Ge _{0 。71} Sn _{0 。15}层作为屏障。最大TE增益达到7000 cm ^{− 1}在0.5 eV时，最大TM增益在0.52 eV时达到5500 cm ^{- 1}。Ge ₀的模态增益_。9 Sn _{0 。1} / Si _{0 。14} Ge _{0 。71} Sn _{0 。15}多量子阱激光器，我们提出并设计能达到100厘米^{- 1} 5 kA的/ cm的电流密度²。结果表明，可以获得硅基激光器。