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Crystal Growth and Temperature Evolution of the Atomic Structure of Pr 3 Ga 5 SiO 14 from the Langasite Family
Crystallography Reports ( IF 0.6 ) Pub Date : 2020-04-07 , DOI: 10.1134/s1063774520020054 A. P. Dudka , A. M. Balbashov
中文翻译:
兰加斯特族的Pr 3 Ga 5 SiO 14原子结构的晶体生长和温度演化
更新日期:2020-04-07
Crystallography Reports ( IF 0.6 ) Pub Date : 2020-04-07 , DOI: 10.1134/s1063774520020054 A. P. Dudka , A. M. Balbashov
Abstract
Pr3Ga5SiO14 crystals from the langasite family have been grown by the floating zone melting technique. Their X-ray diffraction analysis is performed at 16 different temperatures in range of 94–293 K. An experiment with ultrahigh resolution at 94 K has yielded the most exact structural model: sp. gr. P321, Z = 1, a = 8.07636(4) Å, c = 5.06586(2) Å, R1/wR2 = 1.192/1.185%, and Δρmin/Δρmax = –0.93/+0.79 e/Å3 for 3852 unique reflections and 123 refined parameters. The temperature evolution of atomic displacement parameters is estimated based on multitemperature data using the extended Einstein and Debye models. Static components of atomic displacements are selected and the characteristic Einstein and Debye temperatures for structure atoms are determined. No structural anomalies have been found.中文翻译:
兰加斯特族的Pr 3 Ga 5 SiO 14原子结构的晶体生长和温度演化