In this work, the effectiveness of various dielectric passivation materials such as SiO₂, Si₃N₄, Al₂O₃ and Si₃N₄/Al₂O₃ on the DC & RF behaviour of InP-HEMT (High Electron Mobility Transistor) was analyzed using TCAD (Sentaurus) tool. The InP HEMT structure used in this work features a novel T-Gate structure with Pt sinking technology to alleviate short channel effects (SCEs), double-Si-δ-doping technique to improve the 2-dimensional charge density in the quantum well (QW) and n⁺-doped In_0.52Ga_0.48As drain-source (D-S) areas to effectively minimize the D/S parasitic resistance (R_D and R_S). The simulations carried out at 300 K using hydro-dynamic (HD) carrier transport model indicate that 25 nm gate length InP HEMT with Si₃N₄/Al₂O₃ composite dielectric passivation layer provides the highest transconductance (2814 mS/mm), drain current (1210 mA/mm), cut-off frequency (688 GHz) and maximum oscillation frequency (1340 GHz) compared with other dielectric passivation materials and this is attributed to the minimization of parasitic capacitances due to the improved surface quality of the device. InP HEMTs have been considered as an excellent transistor technology for future high speed wireless/optical communication systems, radiometry and deep space communication systems, sensing and imaging and high speed IC applications.

中文翻译：

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钝化材料对用于太赫兹传感和成像的InP-HEMT的DC / RF性能的影响的研究

在这项工作中，SiO ₂，Si ₃ N ₄，Al ₂ O ₃和Si ₃ N ₄ / Al ₂ O ₃等各种介电钝化材料对InP-HEMT（高电子迁移率晶体管）的DC和RF行为的有效性）使用TCAD（Sentaurus）工具进行了分析。用于这项工作的InP HEMT结构具有新颖的T-Gate结构和Pt吸收技术以减轻短沟道效应（SCE），双Si-δ掺杂技术以改善量子阱中的二维电荷密度（QW ）和n ⁺掺杂In _0.52 Ga _0.48作为漏源（DS）区域，可有效地减小D / S寄生电阻（R _D和R _S）。在300 K下使用流体动力学（HD）载流子传输模型进行的仿真表明，具有Si ₃ N ₄ / Al ₂ O _3的25 nm栅极长度InP HEMT与其他介电钝化材料相比，复合介电钝化层可提供最高的跨导（2814 mS / mm），漏极电流（1210 mA / mm），截止频率（688 GHz）和最大振荡频率（1340 GHz）。由于器件表面质量的改善，使寄生电容最小化。InP HEMT被认为是未来高速无线/光通信系统，辐射测量和深空通信系统，传感和成像以及高速IC应用的出色晶体管技术。