Abstract—Spectral and temperature dependences of the magneto-optical transversal Kerr effect (TKE) of GaMnAs layers prepared by different methods are reported in this work. The GaMnAs layers prepared by pulsed laser sputtering at 300°С demonstrate a ferromagnetic behavior below 80 K, which is due to the presence of local ferromagnetic (Ga,Mn)As areas in the paramagnetic matrix. The Ga(In)MnAs layers prepared by ion implantation and subsequent pulsed laser annealing were found to exhibit a high TKE response at low temperatures. The presence of the characteristic band in the TKE spectrum in the range of transitions near the L point of the band structure of Ga(In)As confirms the intrinsic ferromagnetism. The temperature dependences of TKE measured for different spectrum ranges demonstrate nonmonotonic behavior, which indicates the magnetic inhomogeneity of the layers. The peculiarities of the magneto-optical spectra of GaMnAs, which were not observed previously, were explained by taking the magnetic and phase inhomogeneity of the layers into account. The sensitivity of TKE to the phase inhomogeneity of the Ga(In)MnAs layers and the efficiency of TKE in studying the electron spectrum and magnetic structure of diluted magnetic superconductors are demonstrated.

摘要—这项工作报道了GaMnAs层的磁光横向克尔效应（TKE）的光谱和温度依赖性。通过在300°C的脉冲激光溅射制备的GaMnAs层显示出低于80 K的铁磁行为，这是由于在顺磁基质中存在局部铁磁（Ga，Mn）As区域。发现通过离子注入和随后的脉冲激光退火制备的Ga（In）MnAs层在低温下表现出高的TKE响应。TKE频谱中L附近附近跃迁范围内特征带的存在Ga（In）As的能带结构的点确定了固有的铁磁性。在不同光谱范围内测得的TKE的温度依赖性证明其具有非单调性，这表明各层的磁性不均匀。通过考虑各层的磁和相不均匀性，解释了以前未观察到的GaMnAs磁光光谱的特殊性。证明了TKE对Ga（In）MnAs层的相不均匀性的敏感性以及TKE在研究稀磁超导体的电子光谱和磁性结构方面的效率。