Abstract

In this research, TGA technique was used for determining thermal and gravimetrical stability of Al/Sn/La₂O₃ nanostructures prepared by sol-gel and spin-coating methods. Structural properties and surface morphology of the films were investigated by different analysis methods. Energy dispersive X-ray spectroscopy and a map were used to make a quantitative chemical analysis of unknown materials. Electrical properties of the samples were measured by metal-dielectric-semiconductor through capacitance–voltage and current rate–voltage. The conduction mechanism in the electrical field below 0.12 MV/cm and in the temperature range of 335 K < T < 420 K was found to be ohmic emission. A model of thermal excitation is proposed to explain the mechanism of ohmic conduction current. The highest value of dielectric constant (k) was ~32 at T₁ = 200°C with almost amorphous structure. The results showed that at T₁ = 200°C the Al/Sn/La₂O₃ nanostructure has lower leakage current rate and higher capacitance than those for other samples because of almost amorphous structure.

中文翻译：

---

栅介电用Al / Sn / La 2 O 3纳米复合材料的合成与研究

摘要

在这项研究中，TGA技术用于确定通过溶胶-凝胶法和旋涂法制备的Al / Sn / La ₂ O ₃纳米结构的热稳定性和重量稳定性。用不同的分析方法研究了薄膜的结构特性和表面形态。能量色散X射线光谱法和地图用于对未知材料进行定量化学分析。金属电介质通过电容-电压和电流速率-电压测量样品的电性能。在低于0.12 MV / cm的电场中以及在335 K < T的温度范围内的传导机制发现小于420 K为欧姆发射。提出了一种热激励模型来解释欧姆传导电流的机理。在T ₁ = 200°C时，几乎是非晶结构的介电常数（k）的最大值约为32 。结果表明，在T ₁ = 200°C时，Al / Sn / La ₂ O ₃纳米结构由于几乎是非晶结构，因此具有比其他样品更低的漏电流速率和更高的电容。