This paper describes an on-wafer characterization system and calibration technique for frequency up and down converters based on a superconductor–insulator–superconductor (SIS) tunnel junction. The measurement system uses a 4-K probe station in combination with a vector network analyzer which allows measurement of both up- and down-conversion gains and reflection coefficients. We employed and verified a scalar mixer calibration technique for accurate characterization of the conversion properties. We present the detailed measurement technique and verification using an SIS frequency converter sample.

中文翻译：

---

基于SIS的频率上下转换器的晶圆上低温表征技术

本文介绍了基于超导体-绝缘体-超导体 (SIS) 隧道结的上下变频器的晶圆上表征系统和校准技术。测量系统使用 4-K 探针台与矢量网络分析仪相结合，可以测量上变频和下变频增益和反射系数。我们采用并验证了标量混频器校准技术，以准确表征转换特性。我们展示了使用 SIS 变频器示例的详细测量技术和验证。