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Atomic Mixing Induced by Ion Irradiation of V/Cu Multilayers
Chinese Physics Letters ( IF 3.5 ) Pub Date : 2020-03-01 , DOI: 10.1088/0256-307x/37/3/036101
Yan-Bin Sheng 1 , Hong-Peng Zhang 1 , Tie-Long Shen 1 , Kong-Fang Wei 1 , Long Kang 1 , Rui Liu 2 , Tong-Min Zhang 1 , Bing-Sheng Li 3
Affiliation  

Bulk Cu/V multilayers simultaneously possess high strength and excellent radiation resistance thanks to their high density of interfaces. Irradiation-induced atomic mixing of Cu/V multilayers has been less investigated. Here, we investigate the ion irradiation of bulk Cu/V multilayers exposed to or He+ ions at 350°C. The microstructure and elemental distribution are investigated by transmission electron microscopy and energy dispersive x-ray spectroscopy. Facetted bubbles and atomic mixing are observed after ion irradiation. The possible mechanisms of irradiation-induced atomic mixing are discussed.

中文翻译:

V/Cu多层膜的离子辐照引起的原子混合

由于其高密度的界面,块状 Cu/V 多层膜同时具有高强度和出色的耐辐射性。Cu/V 多层膜的辐射诱导原子混合研究较少。在这里,我们研究了在 350°C 下暴露于 He+ 离子的块状 Cu/V 多层膜的离子辐照。通过透射电子显微镜和能量色散X射线光谱研究微观结构和元素分布。离子照射后观察到多面气泡和原子混合。讨论了辐射诱导的原子混合的可能机制。
更新日期:2020-03-01
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