This work presents a multi-sensor readout system-on-chip (SoC) for interfacing with a multi-modal sensor array of amperometric, potentiometric and impedometric sensors. The individual readout circuits can be interfaced to external sensors such as screen printed electrodes (SPE), field effect transistor – based ion sensors such as the ion-sensitive FET (ISFET) and extended gate FET, and tetrapolar electrodes for electrical impedance spectroscopy (EIS). The chip features a method to avoid sensor cross-talk or interference between sensor modes despite a shared reference electrode and readout circuit. This is achieved through pass transistors as sensor selectors and as sub-circuit enables. The chip integrates high performance readout circuits with localized digital switches and a low dropout (LDO) regulator for high power supply rejection ratio (PSRR) bias. The chip has been fabricated using TSMC 0.18 ​μm 1P6M process and can serve as a mixed signal solution for interfacing with multiple sensor arrays for potential applications in point-of-care test and wearables.

这项工作提出了一种多传感器读出芯片系统（SoC），用于与安培，电位和阻抗传感器的多模式传感器阵列接口。各个读出电路可以连接到外部传感器，例如丝网印刷电极（SPE），基于场效应晶体管的离子传感器，例如离子敏感FET（ISFET）和扩展栅极FET，以及用于电阻抗谱（EIS）的四极电极）。该芯片采用了一种避免传感器串扰或传感器模式之间干扰的方法，尽管该方法具有共享的参考电极和读出电路。这可以通过传输晶体管作为传感器选择器和子电路使能来实现。该芯片将高性能读出电路与本地数字开关以及一个低压差（LDO）调节器集成在一起，以提供较高的电源抑制比（PSRR）偏置。该芯片采用台积电（TSMC）0.18μm1P6M工艺制造，可作为混合信号解决方案，用于与多个传感器阵列接口，可用于即时检验和可穿戴设备的潜在应用。