Open-Circuit Voltage Decay (OCVD) method was investigated for few decades as a simple and convenient method to characterize effective lifetime into Ge and Si p-n homojunctions. Minority carrier lifetime (MCL) is an important parameter to optimize device design where being able to investigate one type of carriers is an important goal. The p-n homojunction design is of major importance to reach that purpose by OCVD. We carried out Technology Computer Aided-Design simulations of the OCVD signal. The study focused on Si and GaAs p-n homojunctions. We looked into bulk thickness and doping level influences on bulk lifetime extraction. Previously, those influences have not been quantified for Si and never investigated for GaAs. MCL accurate extraction from bulk required a bulk thickness at least 4 times higher than diffusion length and emitter doping levels at least 2 orders of magnitude higher than bulk. Likewise, the paper shows different accuracy of extraction between GaAs/Si and p-type/n-type bulk in p-n homojunction.

开路电压衰减（OCVD）方法已被研究了几十年，它是一种将Ge和Si pn同质结的有效寿命表征出来的简单便捷的方法。少数载流子寿命（MCL）是优化设备设计的重要参数，而能够研究一种类型的载流子是一个重要目标。pn同质结设计对于通过OCVD达到该目的至关重要。我们对OCVD信号进行了技术计算机辅助设计仿真。该研究集中在Si和GaAs pn同质结上。我们研究了体厚度和掺杂水平对体寿命提取的影响。以前，尚未对Si的影响进行量化，也从未对GaAs进行过调查。MCL从块体中准确提取所需的块体厚度至少比扩散长度高4倍，发射极掺杂水平至少比块体高2个数量级。同样，本文显示了在pn同质结中GaAs / Si与p型/ n型块体之间的提取精度不同。