A simple model is proposed for the Back Enhanced SOI MOSFET in triode region. This model is based on a conventional MOSFET model in series with resistors and antiparallel Schottky diodes. A robust parameter extraction method, based on lateral optimization, is also presented. The dependence of the extracted parameters with the back-gate bias is studied.

中文翻译：

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肖特基接触对p型背面增强型SOI MOSFET的影响

针对三极管区域中的反向增强型SOI MOSFET，提出了一个简单的模型。该模型基于与电阻和反并联肖特基二极管串联的常规MOSFET模型。还提出了一种基于横向优化的鲁棒参数提取方法。研究了提取的参数与背栅偏置的相关性。