This paper presents a physics-based scalable formulation for interface trap generation in the vicinity of the emitter-base spacer oxide interface in advanced SiGe HBTs. Aging tests were performed for various emitter dimensions to investigate the scalability of the dynamics of hot-carrier degradation. An improved formulation of the bond dissociation rate is also proposed incorporating a scaling rule depending on the avalanche current density. The hydrogen diffusion through the EB spacer has been modeled using an RC ladder network and has been scaled according to the hydrogen diffusion volume. Its accuracy has been validated over a wide range of aging tests and various geometry features.

本文提出了一种基于物理的可扩展公式，用于在高级SiGe HBT中的发射极-基极间隔层氧化物界面附近生成界面陷阱。对各种发射体尺寸进行了老化测试，以研究热载流子降解动力学的可扩展性。还提出了结合雪崩电流密度的缩放比例规则的键解离速率的改进公式。通过EB隔离层的氢扩散已使用RC梯形图网络进行了建模，并已根据氢扩散量进行了缩放。它的精度已通过各种老化测试和各种几何特征得到验证。