We report a novel switched-mode light-emitting device (LED) in an undoped ultra-thin-body (UTB) based on the electrostatically-induced electron-hole bilayer (EHB) concept. The proposed device works on the principle of formation of EHB channels by applying suitable gate biases during the charging-cycle, and their recombination during a discharging-cycle. Using TCAD simulations, we show that continuous switching of the gates in an indium arsenide (InAs) based EHB LED with a $~$12 $\mathrm{\mu }$s time period leads to radiative recombination of the induced charge carriers with a peak internal quantum efficiency (IQE) as high as $~$92$\%$ and a time-averaged IQE of $~$29$\%$. The proposed concept obviates the need for chemically doped p-n junctions in the UTB device for light-emitting applications. However, when relying on the thermal generation alone as a source of charge carriers in a small undoped semiconductor volume, a narrow bandgap semiconductor (such as InAs) is required for the proposed LED which ultimately limits the switching speed. For wider bandgap materials, highly doped regions on either side of the intrinsic UTB layer in the form of a lateral PIN structure could be employed where switching speed is then not limited by thermal generation. TCAD simulations of a silicon (Si) EHB LED based on such a gated PIN structure shows switching capability in the GHz frequency range making it attractive for SOI based optocoupling applications.

我们报告了基于静电感应电子空穴双层（EHB）概念的无掺杂超薄体（UTB）中的新型开关模式发光器件（LED）。所提出的器件通过在充电周期内施加合适的栅极偏压以及在放电周期内将它们重新组合，从而根据EHB通道的形成原理进行工作。使用TCAD仿真，我们显示了基于砷化铟（InAs）的EHB LED的栅极连续开关$〜$12 $\mathrm{\mu }$s的时间周期会导致感应的电荷载流子进行辐射复合，其峰值内部量子效率（IQE）高达 $〜$92$％$ 时间平均IQE为 $〜$29$％$。所提出的概念消除了用于发光应用的UTB器件中对化学掺杂的pn结的需要。但是，当仅依靠发热作为小的未掺杂半导体体积中的电荷载流子源时，建议的LED需要窄带隙半导体（例如InAs），这最终限制了开关速度。对于较宽的带隙材料，可以采用横向PIN结构形式的本征UTB层两侧的高掺杂区域，此时开关速度不受发热量的限制。基于这种门控PIN结构的硅（Si）EHB LED的TCAD仿真显示，其在GHz频率范围内的开关能力使其对于基于SOI的光耦合应用具有吸引力。