In this paper, using numerical simulations, analytical modeling and experimental data, we validate the applicability of the transconductance-to-current ratio (g_m/I_D) derivative (d(g_m/I_D)/dV_G) method for extracting the threshold voltage (V_TH) in junctionless (JL) MOSFETs and show its advantages over the commonly-used transconductance derivative (or double derivative of drain current) method (dg_m/dV_G≡d²I_D/dV_G²). It is shown that, although both methods are based on the same theoretical V_TH-criterion, the d(g_m/I_D)/dV_G method is more accurate than the d²I_D/dV_G² method due to its lesser sensitivity to the gate-voltage-dependent mobility and series resistance parasitic effects, being particularly important in JL MOSFETs.

在本文中，我们使用数值模拟，分析模型和实验数据，验证了跨导电流比（g _m / I _D）导数（d（g _m / I _D）/ dV _G）方法的适用性。阈值电压（V _TH在无结）（JL）的MOSFET，并显示其在常用的跨导导数的优点（或漏电流的二次导数）方法（分克_米/的dV _ģ ≡d ²我_d /的dV _{G ^} ²）。结果表明，尽管两种方法都基于相同的理论V _TH准则，但d（g _m / I _D）/ dV _G方法比d ² I _D / dV _G ²方法更精确，因为它的精度较低对取决于栅极电压的迁移率的灵敏度和串联电阻寄生效应的敏感性，在JL MOSFET中尤其重要。