A new methodology for MOSFET characterization making use of the on-resistance characteristics R_on(V_g,V_d) = V_d/I_d(V_g,V_d) and associated derivatives dR_on/dV_g and dR_on/dV_d is proposed. This approach enables to eliminate the influence of source-drain series resistance R_sd not only in linear region but also in non-linear region of MOSFET operation. Therefore, it allows for intrinsic MOSFET parameter extraction free from source and drain series resistance.

中文翻译：

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基于新颖的基于导通电阻的MOSFET电气特性分析方法

利用导通电阻特性R _on（V _g，V _d）= V _d / I _d（V _g，V _d）以及相关导数dR_和/ dV _g以及dR_和/ dV _d进行MOSFET表征的新方法被提议。这种方法不仅可以消除MOSFET工作的线性区域，而且可以消除非线性区域的源漏串联电阻R _sd的影响。因此，它允许无源极和漏极串联电阻的本征MOSFET参数提取。