The pseudo-MOSFET configuration is an electrical characterization technique developed for silicon-on-insulator (SOI) wafers. The wide variety of experiments that have been performed to date have also extended recently in the study of out-of-equilibrium phenomena for bio-sensing applications. However, the lack of a full understanding of the ohmic contact behaviour between the probes and the low doped silicon film results in simulation inconsistencies. This work proposes a simulated device structure that is capable of reproducing the behaviour of the device and further extends the experiments into large-signal linear ramps which are also reproduced through simulations.

伪MOSFET配置是为绝缘体上硅（SOI）晶圆开发的一种电气表征技术。迄今为止，迄今已进行的各种各样的实验还在生物传感应用的失衡现象研究中得到了扩展。但是，由于对探针和低掺杂硅膜之间的欧姆接触行为缺乏全面的了解，导致了模拟的不一致。这项工作提出了一种模拟的设备结构，该结构能够重现设备的行为，并进一步将实验扩展到大信号线性斜坡，该信号也可以通过仿真来重现。