Low frequency noise studies are performed in Si/SiGe superlattice I/O n-channel FinFETs. It was observed that the experimental noise spectra may contain additionally to flicker and white noise one or several generation recombination (GR) components. The methodology to estimate the noise parameters corresponding to the 1/f noise and each GR noise contribution was detailed. It is found that the carrier number fluctuations mechanisms prevail the 1/f noise. The important 1/f noise level variability observed for devices having the same geometry may be related to the remote Coulomb scattering effect through the correlation between the mobility and the 1/f noise levels. Low frequency noise spectroscopy was performed allowing to identify traps related to divacancies, hydrogen and a possible carbon contamination in Si/SiGe fins.

低频噪声研究是在Si / SiGe超晶格I / O n通道FinFET中进行的。观察到，实验噪声频谱可能除了闪烁和白噪声外还包含一种或几种世代重组（GR）成分。详细介绍了估算与1 / f噪声和每个GR噪声贡献相对应的噪声参数的方法。已经发现，载波数波动机制占了1 / f噪声。通过迁移率与1 / f之间的相关性，对于具有相同几何形状的设备观察到的重要的1 / f噪声电平变异性可能与远程库仑散射效应有关。噪音水平。进行了低频噪声光谱分析，可以识别与Si / SiGe鳍片中的空位，氢和可能的碳污染有关的陷阱。