Stabilizing Thermoelectric Figure‐of‐Merit of Superionic Conductor Cu2Se through W Nanoinclusions,Physica Status Solidi-Rapid Research Letters

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Stabilizing Thermoelectric Figure‐of‐Merit of Superionic Conductor Cu2Se through W Nanoinclusions
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-04-29 , DOI: 10.1002/pssr.202000102
Anil Kumar Bohra ₁ , Ranu Bhatt ₁ , Ajay Singh ₁ , Shovit Bhattacharya ₁ , Ranita Basu ₁ , Pramod Bhatt ₂ , Mani Navaneethan ₃ , Shaibal K. Sarkar ₄ , Shahid Anwar ₅ , Kunal Puranchand Muthe ₁ , Dinesh Kumar Aswal _{1,

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Affiliation

Cu₂Se exhibits a high figure‐of‐merit (ZT) >1 due to the scattering of phonons by mobile Cu⁺ ions, but migration of the Cu⁺ ions leads to chemical instability at high temperature. It is demonstrated that the incorporation of W in the Cu₂Se matrix results in peak ZT of 2.1 (ZT_avg = 0.93) at 878 K. After the first thermal cycle, the peak ZT of the composite decreases to stable value of ≈1.5 (ZT_avg = 0.97). The enhanced stability of the nanocomposite along with high ZT_avg is attributed to the covering of Cu₂Se grain boundaries with W that inhibits Cu⁺ migration, reduces Se loss, and improves charge carrier mobility.

中文翻译：

通过W纳米夹杂物稳定超离子导体Cu2Se的热电性能

的Cu ₂硒表现出高的数字的优值（ZT）> 1由于由移动的Cu声子的散射⁺离子，但在Cu迁移⁺在高温下的离子导致的化学不稳定性。已经证明，W的于Cu掺入₂硒矩阵导致峰ZT的2.1（ZT_平均 = 0.93）在878 K.第一次热循环后，将峰ZT复合减小到的≈1.5稳定值的（ZT_平均 = 0.97）。纳米复合材料稳定性的提高以及高ZT _avg归因于Cu ₂的覆盖Se的晶界与W交界，从而抑制Cu ⁺迁移，减少Se的损失，并改善载流子迁移率。

更新日期：2020-04-29

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