We investigated the effects of etching conditions on the performance of light-emitting diodes (LEDs) of various sizes aimed at vehicle headlamp applications. Photoluminescence (PL) images showed that after wet etching, the percentage of bad LED arrays significantly increased from 75% to 94%, and the leakage current at −5 V significantly increased from 1.14 × 10 −9 A to 5.02 × 10 −6 A. It was shown that plasma etching turned an Ag layer into Ag particles, the size and density of which depended on the treatment time and Ag layer thickness. These Ag particles served as micro-masks during dry etching. Plasma etching produced relatively uniform hillocks of diameters 0.9–1.43 μ m and heights 0.85–2.5 μ m. Moreover, the PL images showed that dry etching did not degrade the LED arrays. Furthermore, the light output power of the dry-etched LEDs was higher than that of the wet-etched LEDs. For example, the output power levels of the dry-etched LEDs (chip si...

中文翻译：

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改进的大灯应用像素化LED阵列的泄漏和输出特性

我们研究了蚀刻条件对针对汽车前照灯应用的各种尺寸的发光二极管（LED）性能的影响。光致发光（PL）图像显示，湿法蚀刻后，不良LED阵列的百分比从75％显着增加到94％，-5 V时的泄漏电流从1.14×10 -9 A显着增加到5.02×10 -6 A结果表明，等离子刻蚀将Ag层转变为Ag颗粒，其大小和密度取决于处理时间和Ag层厚度。这些银颗粒在干法刻蚀过程中用作微掩膜。等离子刻蚀产生了相对均匀的小丘，直径为0.9-1.43μm，高度为0.85-2.5μm。而且，PL图像显示干法蚀刻不会使LED阵列退化。此外，干蚀刻LED的光输出功率高于湿蚀刻LED的光输出功率。例如，干法刻蚀的LED（芯片尺寸）的输出功率水平。