To improve the blocking performance of Ga2O3 Schottky barrier diode (SBD), based on the field strength distribution at the bottom of the trench and edge effect, the impacts of structure parameter on breakdown voltage and the figure of merit (FOM) were investigated by TCAD simulation and optimization. The results indicated that the breakdown voltage raised as the corner radius of trench R and the trench length K increased in a certain range, in which K was employed to optimize the structure with a minor mesa width W. In addition, Al2O3 was confirmed as an appropriate dielectric layer material in Ga2O3 SBD. When the structure parameters were W = 1 μm, R = 0.6 μm, K = 0.8 μm–0.9 μm and Al2O3 was selected as dielectric layer materials, a Ga2O3 trench SBD with breakdown voltage of 3.4 kV and the FOM of over 1.7 GWcm−2 was proposed.

中文翻译：

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具有优化沟槽拐角半径的 3.4 kV 击穿电压 Ga2O3 沟槽肖特基二极管

为了提高Ga2O3肖特基势垒二极管（SBD）的阻断性能，基于沟槽底部的场强分布和边缘效应，TCAD研究了结构参数对击穿电压和品质因数（FOM）的影响模拟和优化。结果表明，在一定范围内，随着沟槽 R 的角半径和沟槽长度 K 的增加，击穿电压升高，其中 K 用于优化具有较小台面宽度 W 的结构。此外，Al2O3 被确认为Ga2O3 SBD 中合适的介电层材料。当结构参数为 W = 1 μm、R = 0.6 μm、K = 0.8 μm–0.9 μm 且选择 Al2O3 作为介电层材料时，Ga2O3 沟槽 SBD 击穿电压为 3.4 kV，FOM 超过 1.7 GWcm-2被提议。