InAlGaN/AlN/GaN high electron mobility transistors (HEMTs) on a silicon substrate with high electron mobility is demonstrated for the first time. The InAlGaN/AlN/GaN heterostructures has a high electron mobility of 1540 cm 2 V −1 s −1 and low sheet resistance of 228.2 Ω sq −1 by inserting a thin GaN interlayer (IL) between InAlGaN and AlN layers. The experimental results demonstrate that an optimized GaN IL contributes to a better atomic arrangement of the InAlGaN barrier layer in the InAlGaN/GaN HEMTs and results in better electron transport properties for the device. The InAlGaN/GaN device with 170 nm gate and 2 μ m source-to-drain distance shows a high maximum current density (I max ) of 1490 mA mm −1 and high transconductance (g m ) of 401 mS mm −1 . Such results demonstrate the potential of adopting InAlGaN/GaN heterostructure on silicon for low cost mm-wave applications in the future.

中文翻译：

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带有GaN插入层的InAlGaN / AlN / GaN HEMT在硅衬底上的电子传输性能增强

首次展示了具有高电子迁移率的硅基板上的InAlGaN / AlN / GaN高电子迁移率晶体管（HEMT）。通过在InAlGaN和AlN层之间插入薄的GaN中间层（IL），InAlGaN / AlN / GaN异质结构具有1540 cm 2 V -1 s -1的高电子迁移率和228.2Ωsq -1的低薄层电阻。实验结果表明，优化的GaN IL有助于InAlGaN / GaN HEMT中InAlGaN势垒层的原子排列更好，并为器件提供更好的电子传输性能。具有170 nm栅极和2μm源极到漏极距离的InAlGaN / GaN器件显示出1490 mA mm -1的高最大电流密度（I max）和401 mS mm -1的高跨导（gm）。