Abstract In this study, we reported a systematic approach to prepare bare and lead doped Mn3O4 films synthesized by the SILAR method. Morphological, structural, optical and dielectric specialties of the Mn3O4 films were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Energy Dispersive Spectrometry (EDS), X-ray diffraction (XRD) analysis, Ultraviolet–Visible (UV–Vis) spectrophotometry and the impedance analysis, respectively with respect to changes in Pb dopant quantity. SEM and AFM analysis exhibited that Pb-doping influenced the morphology of the film surface. X-ray diffraction patterns proved that films have a cubic crystal structure with preferential orientations of (104) and (211) planes. The crystallite sizes of the bare and lead-doped Mn3O4 films were found to vary from 20.80 to 10.20 nm. The bandgap value of the Mn3O4 films increases from 2.20 eV to 2.38 eV after doping Pb. The dielectric constant, AC conductivity, and loss tangent of the produced samples were studied in the frequency range of 20 Hz-1 MHz. The analysis results showed that the dielectric constant and AC conductivity of the Mn3O4 compound had changed drastically with the doping of Pb. The dielectric constant and AC conductivity rose from 1703 to 120777 and from 3.35 × 10−5 to 2.6310−3 S/m at 100 Hz with 0.25 M% Pb-doping, respectively.

中文翻译：

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通过掺杂重金属铅调节钆锰 (Mn3O4) 薄膜的形态、结构、光学和介电性能

摘要 在这项研究中，我们报道了一种通过 SILAR 方法合成裸露和铅掺杂 Mn3O4 薄膜的系统方法。通过扫描电子显微镜 (SEM)、原子力显微镜 (AFM)、能谱分析 (EDS)、X 射线衍射 (XRD) 分析、紫外-可见 (UV) 分析，研究了 Mn3O4 薄膜的形态、结构、光学和介电特性。 –Vis) 分光光度法和阻抗分析，分别与 Pb 掺杂量的变化有关。SEM 和 AFM 分析表明 Pb 掺杂影响了薄膜表面的形态。X 射线衍射图证明薄膜具有立方晶体结构，具有 (104) 和 (211) 平面的优先取向。发现裸露和掺铅 Mn3O4 薄膜的微晶尺寸从 20.80 到 10.20 nm 不等。掺杂 Pb 后，Mn3O4 薄膜的带隙值从 2.20 eV 增加到 2.38 eV。在 20 Hz-1 MHz 的频率范围内研究了所生产样品的介电常数、交流电导率和损耗角正切。分析结果表明，Mn3O4 化合物的介电常数和交流电导率随着 Pb 的掺杂发生了剧烈变化。介电常数和 AC 电导率分别从 1703 上升到 120777 和从 3.35 × 10−5 上升到 2.6310−3 S/m，在 100 Hz 下，Pb 掺杂量为 0.25 M%。分析结果表明，Mn3O4 化合物的介电常数和交流电导率随着 Pb 的掺杂发生了剧烈变化。介电常数和 AC 电导率分别从 1703 上升到 120777 和从 3.35 × 10−5 上升到 2.6310−3 S/m，在 100 Hz 下，Pb 掺杂量为 0.25 M%。分析结果表明，Mn3O4 化合物的介电常数和交流电导率随着 Pb 的掺杂发生了剧烈变化。介电常数和 AC 电导率分别从 1703 上升到 120777 和从 3.35 × 10−5 上升到 2.6310−3 S/m，在 100 Hz 下，掺杂了 0.25 M% Pb。