Thermally stimulated luminescence (TSL) of β -Ga 2 O 3 single crystals doped with Cr 3+ and Mg 2+ impurities was investigated. Based on the correlation between the Cr 3+ concentration and light sum accumulated in the thermoluminescence (TL) glow peak at 285 K, it was concluded that doping of β -Ga 2 O 3 with Cr 3+ ions leads to the formation of electron traps manifested in this peak. The activation energy of peak at 285 K is equal to Ec-0.55 eV and close to E 1 . Thus the Cr 3+ e − centers can be a candidate for E 1 . The high-temperature TL glow peak at 385 K (Ec-0.94 eV) is related to oxygen vacancies which are created in gallium oxide doped by Mg 2+ ions to compensate for the negative charge formed by the substitution of gallium sites by magnesium ions.The co-doping of β -Ga 2 O 3 crystals with Cr 3+ and Mg...

中文翻译：

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Cr 3+和Mg 2+杂质对β-Ga 2 O 3晶体的热致发光和深陷阱的影响

研究了掺有Cr 3+和Mg 2+杂质的β-Ga 2 O 3单晶的热激发发光（TSL）。根据Cr 3+浓度与285 K在热致发光（TL）辉光峰中累积的光量之间的相关性，得出结论，用Cr 3+离子掺杂β-Ga 2 O 3导致电子陷阱的形成。体现在这个高峰。285 K处的峰值激活能等于Ec-0.55 eV并接近E 1。因此，Cr 3+ e-中心可以成为E 1的候选者。385 K（Ec-0.94 eV）处的高温TL辉光峰与氧空位有关，氧空位是在掺杂Mg 2+离子的氧化镓中产生的，以补偿由镁离子取代镓位点形成的负电荷。 β-Ga 2 O 3晶体与Cr 3+和Mg ...的共掺杂