In this work, the RF performance of proposed p-type NiO pocket based β -Ga 2 O 3 /graphene heterostructure MOSFET has been investigated. The figure of merits (FOMs) for its performance investigation includes transconductance (g m ), output conductance (g d ), intrinsic capacitances (gate to drain capacitance C gd and gate to source capacitance C gs ) and cut-off frequency (f T ). The large signal CW RF performance is also investigated which includes output power (P OUT ), power-added efficiency (PAE) and power gain (G p ) as a key FOMs. The key idea behind this work is to demonstrate a device with improved RF performance and low leakages. The RF characteristics of the proposed device have been studied to show its utility in the wireless applications. The introduction of ultra-thin graphene layer beneath the channel region results in 0.85 times lower C gs , 1.04 times improvement in f...

中文翻译：

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p型NiO口袋和超薄石墨烯层对β-Ga 2 O 3 MOSFET射频性能的影响

在这项工作中，已经研究了建议的基于p型NiO口袋的β-Ga 2 O 3 /石墨烯异质结构MOSFET的RF性能。用于性能研究的优值指标（FOM）包括跨导（gm），输出电导（gd），固有电容（栅极至漏极电容C gd和栅极至源极电容C gs）和截止频率（f T）。还研究了大信号CW RF性能，其中包括作为关键FOM的输出功率（P OUT），功率附加效率（PAE）和功率增益（G p）。这项工作背后的关键思想是演示一种具有改善的RF性能和低泄漏的设备。已经研究了所提出设备的RF特性，以显示其在无线应用中的效用。在沟道区下方引入超薄石墨烯层的结果为0。