Abstract In layered semiconductor heterostructure, there exists spin-orbit coupling (SOC), which can induce electron-spin polarization. Considering a realistic 3-layered semiconductor heterostructure, InSb/InxGa1-xAs/GaSb, we present a theoretical study of spin polarized transport by the Rashba-SOC type. An obvious electron-spin polarization effect is found in such a 3-layered system, and its degree is related to in-plane wave vector, Rashba-SOC strength and intermediate-layer parameters. Both magnitude and sign of spin polarization can be manipulated by tuning interfacial confining electric field or fabricating intermediate layer properly. These interesting features may be useful for exploring new way of spin injection and designing controllable spin filter for spintronics applications.

中文翻译：

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Rashba 自旋轨道耦合在真实的 3 层半导体异质结构中诱导电子自旋极化

摘要 在层状半导体异质结构中，存在自旋轨道耦合（SOC），可以引起电子自旋极化。考虑到现实的 3 层半导体异质结构 InSb/InxGa1-xAs/GaSb，我们提出了 Rashba-SOC 类型的自旋极化传输的理论研究。在这样的三层系统中发现了明显的电子自旋极化效应，其程度与面内波矢量、Rashba-SOC 强度和中间层参数有关。自旋极化的大小和符号都可以通过调整界面限制电场或适当制造中间层来控制。这些有趣的特征可能有助于探索自旋注入的新方法和设计用于自旋电子学应用的可控自旋滤波器。