Abstract Vanadium dioxide (VO2) is a strongly correlated oxide widely studied for applications in electronics due to its metal-insulator transition at approximately 341 K. While thin films and nanostructures of VO2 have been grown on common rigid substrates like Al2O3, TiO2, and Si, strong chemical interaction between the substrates and VO2 can induce significant strain during the metal-insulator transition. This not only broadens the temperature range of transition but also leads to the formation of alternating insulating and metallic domains, hence complicating room temperature device applications. Here, we report growth of VO2 wires by conventional as well as van der Waals epitaxy and compare their phase transition dynamics. By revealing metal-insulator transition proceeding via a single domain within a narrow temperature range of 2 K, we present van der Waals epitaxy as an effective tool to tune phase transition kinetics in VO2 or similar systems.

中文翻译：

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通过六方氮化硼上单晶 VO2 的范德华外延调节相变动力学

摘要 二氧化钒 (VO2) 是一种广泛研究的强相关氧化物，由于其在大约 341 K 下的金属-绝缘体转变，因此在电子产品中的应用得到了广泛的研究。虽然 VO2 的薄膜和纳米结构已在常见的刚性基材上生长，衬底和 VO2 之间的强化学相互作用可以在金属-绝缘体转变过程中引起显着的应变。这不仅拓宽了转变的温度范围，而且导致形成交替的绝缘域和金属域，从而使室温设备应用复杂化。在这里，我们报告了通过传统和范德华外延生长的 VO2 线，并比较了它们的相变动力学。通过揭示在 2 K 的狭窄温度范围内通过单个域进行的金属-绝缘体转变，