Abstract SrMoO3 is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO3 using molecular beam epitaxy (MBE) technique under low oxygen-flow rate. Introduction of SrTiO3 buffer layers of 4–8 unit cells between the film and the (0 0 1)-oriented SrTiO3 or KTaO3 substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO3 film is also verified by angle resolved photoemission spectroscopy (ARPES) measurements showing a clear Fermi surface.

中文翻译：

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高导电氧化物 SrMoO3 的分子束外延生长

摘要 SrMoO3 因其优异的导电性而成为一种很有前途的材料，但生长高质量的薄膜仍然是一个挑战。在这里，我们在低氧流量下使用分子束外延 (MBE) 技术合成了 SrMoO3 外延薄膜。在薄膜和 (0 0 1) 取向的 SrTiO3 或 KTaO3 基板之间引入 4-8 个单元的 SrTiO3 缓冲层对于去除薄膜表面的杂质和/或粗糙度至关重要。与通过其他技术获得的薄膜相比，所获得的薄膜显示出改进的导电性。SrMoO3 薄膜的高品质也通过角分辨光电子能谱 (ARPES) 测量得到验证，显示清晰的费米表面。