Abstract We report synthesis of colloidal quantum dots (CQDs), indium gallium phosphide with zinc sulphide shell (In1−xGaxP@ZnS) by a hot injection method and investigate effects of In/Ga ratio on the optical properties of the obtained CQDs. The bandgap of CQDs (1.34–3.54 eV) is controlled by the In/Ga ratio without the quantum confinement effect. The photoluminescence (PL) quantum yield is also dependent on the In/Ga ratio, and temperature dependent PL results show that the randomness of crystal lattice is the most influential parameter. These results show that the In1−xGaxP alloy CQDs can be useful for absorbing the whole range of visible light. In addition, this article can provide background knowledge regarding effect of core metal composition on the optical properties of produced CQDs.

中文翻译：

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In1-xGaxP@ZnS合金核壳型胶体量子点的合成与表征

摘要 我们报告了通过热注入法合成胶体量子点 (CQD)、具有硫化锌壳的磷化铟镓 (In1−xGaxP@ZnS)，并研究了 In/Ga 比对所得 CQD 光学性质的影响。CQD 的带隙 (1.34–3.54 eV) 由 In/Ga 比控制，没有量子限制效应。光致发光 (PL) 量子产率也取决于 In/Ga 比，并且温度相关的 PL 结果表明晶格的随机性是最有影响的参数。这些结果表明 In1-xGaxP 合金 CQD 可用于吸收整个可见光范围。此外，本文可以提供有关核心金属成分对生产的 CQD 光学性能影响的背景知识。