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Fabrication and TCAD validation of ambient air-processed ZnO NRs/CH3NH3PbI3/spiro-OMeTAD solar cells
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.spmi.2020.106540
Deepak Kumar Jarwal , Amit Kumar , Ashwini Kumar Mishra , Smrity Ratan , Rishibrind Kumar Upadhyay , Chandan Kumar , Bratindranath Mukherjee , Satyabrata Jit

Abstract This paper reports the fabrication, characterization and simulation of hybrid perovskite solar cells (PSCs) in ambient condition. The proposed PSC structures use a CH3NH3PbI3 hybrid perovskite based active layer sandwiched between a ZnO nanorods (NRs) electron transport layer (ETL) and a spiro-OMeTAD (undoped and doped) hole transport layer (HTL). The ZnO NRs are grown using low-cost solvothermal process at relatively low temperature. The performance of fabricated PSCs are analyzed for both the undoped and doped (with TBP and LiTFSI) spiro-OMeTAD based HTLs. All the solar parameters namely, short circuit current density (JSC), open circuit voltage (VOC), fill factor (FF), power conversion efficiency (PCE) and external quantum efficiency (EQE) are calculated from experimentally measured current density versus voltage (J-V) and wavelength transient characteristics in ambient condition. The maximum PCE of 10.18% is obtained for the doped HTL whereas 9.51% for undoped HTL. The improved performance due to HTL doping is attributed to the enhanced charge transportation of the HTL. The experimental results obtained from the fabricated PSCs are also compared with the SetFos™ TCAD simulation data using drift-diffusion model. The simulated results are observed to be well matched to the experimental data.

中文翻译:

环境空气处理的 ZnO NRs/CH3NH3PbI3/spiro-OMeTAD 太阳能电池的制造和 TCAD 验证

摘要 本文报告了混合钙钛矿太阳能电池 (PSC) 在环境条件下的制造、表征和模拟。所提出的 PSC 结构使用夹在 ZnO 纳米棒 (NRs) 电子传输层 (ETL) 和螺-OMeTAD(未掺杂和掺杂)空穴传输层 (HTL) 之间的 CH3NH3PbI3 混合钙钛矿基活性层。ZnO NRs 是在相对较低的温度下使用低成本溶剂热法生长的。针对未掺杂和掺杂(使用 TBP 和 LiTFSI)基于螺-OMeTAD 的 HTL 分析了制造的 PSC 的性能。所有太阳能参数,即短路电流密度 (JSC)、开路电压 (VOC)、填充因子 (FF)、功率转换效率 (PCE) 和外部量子效率 (EQE) 是根据实验测量的电流密度与电压 (JV) 以及环境条件下的波长瞬态特性计算得出的。掺杂 HTL 的最大 PCE 为 10.18%,而未掺杂的 HTL 为 9.51%。由于 HTL 掺杂而提高的性能归因于 HTL 增强的电荷传输。还将从制造的 PSC 获得的实验结果与使用漂移扩散模型的 SetFos™ TCAD 仿真数据进行比较。观察到模拟结果与实验数据很好地匹配。由于 HTL 掺杂而提高的性能归因于 HTL 增强的电荷传输。还将从制造的 PSC 获得的实验结果与使用漂移扩散模型的 SetFos™ TCAD 仿真数据进行比较。观察到模拟结果与实验数据很好地匹配。由于 HTL 掺杂而提高的性能归因于 HTL 增强的电荷传输。还将从制造的 PSC 获得的实验结果与使用漂移扩散模型的 SetFos™ TCAD 仿真数据进行比较。观察到模拟结果与实验数据很好地匹配。
更新日期:2020-07-01
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