An analysis of the strain-induced group velocity (GV) and effective mass (EM) of massless topological Dirac fermions on the SnTe (001) surface, protected by crystalline symmetry, is presented. Using the traditional semi-classical $\overrightarrow{k}\cdot \overrightarrow{p}$ approach by associating fermions with wave-packets, we find that the expression for the energy dispersion surface as well as both GV and EM are anisotropic in the absence and presence of strain. The band structure calculations indicate that the massive Dirac fermions emerge for strained SnTe (001) surface. However, under strong strains, GVs and EMs of all branches of conduction and valence bands are the same quantitatively, but still anisotropic along different directions. On the other hand, depending on the special critical compressive and/or tensile strains, the direction of the fermionic waves is reversed. Further, the behavior of heavy and light masses are characterized qualitatively with strain modulus and direction. Our results are favorable for the thermoelectric properties of SnTe semiconductor since electronic features are coupled to the heat transports.

提出了由晶体对称性保护的SnTe（001）表面无质量拓扑狄拉克费米子的应变诱导基团速度（GV）和有效质量（EM）的分析。使用传统的半古典$\overrightarrow{ķ}\cdot \overrightarrow{p}$通过将费米子与波包相关联的方法，我们发现在不存在和存在应变的情况下，能量分散表面以及GV和EM的表达式都是各向异性的。能带结构计算表明，应变的SnTe（001）表面出现大量的狄拉克费米子。然而，在强应变下，导带和价带的所有分支的GV和EM在数量上是相同的，但沿不同方向仍是各向异性的。另一方面，取决于特殊的临界压缩应变和/或拉伸应变，费米离子波的方向相反。此外，重质量和轻质量的行为通过应变模量和方向进行定性表征。