The recovery of radiation defects in tungsten (W) due to post-irradiation isochronal (15 min) annealing at temperatures in the range of 1600–2100 K has been investigated. The defects were introduced in W (100) single crystals by irradiation with 9 MeV W ions to a maximum damage level of 1.1 dpa at 290 K. Vacancies and vacancy clusters in the samples were examined using positron annihilation lifetime spectroscopy. The defects were decorated with deuterium (D) by exposing the annealed samples to a low-flux (10²⁰ D/(m²s)), low-energy (10 eV/D) D plasma at a temperature of 450 K. The D concentration profiles in the samples were measured by D(³He, p)α nuclear reaction analysis and the D binding states in the defects were identified by thermal desorption spectroscopy. Annealing at 1600–1900 K resulted in the presence of mainly large vacancy clusters which gave rise to a single desorption peak near 600 K. The trapped D concentration in the sample annealed at 1600 K was 15% of that in the as-irradiated sample and decreased to 4% in the sample annealed at 1900 K. Annealing at 2000 K resulted in the complete recovery of radiation defects.

已经研究了在1600–2100 K的温度范围内，由于辐照后等时（15分钟）退火而导致的钨（W）辐射缺陷的恢复。通过在290 K下用9 MeV W离子照射到最大损伤水平为1.1 dpa的W（100）单晶中引入缺陷。使用正电子an没寿命光谱法检查样品中的空位和空位簇。通过在450 K的温度下将退火样品暴露于低通量（10 ²⁰  D /（m ² s）），低能（10 eV / D）D等离子体中，用氘（D）装饰缺陷。样品中的D浓度分布通过D（³ He，p）α测量核反应分析和缺陷中的D结合态通过热解吸光谱法鉴定。在1600–1900 K退火时，主要存在大的空位簇，从而在600 K附近产生一个解吸峰。在1600 K退火的样品中，被捕集的D浓度是辐照样品中D的15％，在1900 K退火的样品中，镍含量降低到4％。在2000 K退火可以完全恢复辐射缺陷。