Abstract After the growth of GaSb buffer layers using Bi as a surfactant, InAs layers were grown by molecular beam epitaxy on Ge (1 1 1) vicinal substrates. The effects of the As beam pressure and the substrate temperature on the surface morphology and the twin generation have been investigated by atomic force microscopy and X-ray diffraction, respectively. It has been shown that, in spite of the rather rough surface of the GaSb buffer layer, a flat and twin-free InAs layer can be grown by adopting the appropriate As beam pressure and substrate temperature for the InAs growth. The use of the InAs flattening layer together with the GaSb twin suppression layer is expected to open the possibility of manufacturing devices for which flat interfaces are vital, e.g., InAs/GaSb superlattice infrared detectors, InAs based hetero-structure field-effect transistors, and so on.

中文翻译：

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Ge (111) 衬底上平坦且无双的 InAs 层生长

摘要 在使用Bi 作为表面活性剂生长GaSb 缓冲层后，通过分子束外延在Ge (1 1 1) 邻位衬底上生长InAs 层。分别通过原子力显微镜和 X 射线衍射研究了 As 束压力和衬底温度对表面形貌和孪晶生成的影响。已经表明，尽管 GaSb 缓冲层的表面相当粗糙，但可以通过为 InAs 生长采用适当的 As 束压力和衬底温度来生长平坦且无双的 InAs 层。InAs 平坦层与 GaSb 双抑制层一起使用有望开启制造平坦界面至关重要的器件的可能性，例如 InAs/GaSb 超晶格红外探测器，