High quality graphene on a Cu foil was synthesized by atmospheric pressure chemical vapor deposition. The morphology and microstructure of specimens were characterized by optical microscopy, scanning electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, ultraviolet-visible spectroscopy and X-ray photoelectron spectroscopy. The corrosion resistance of specimens was tested by potentiodynamic polarization and electrochemical impedance spectroscopy. Results show that monolayer and high quality tri-layer graphene are synthesized at 1 000 °C for 5 and 15 min depositions, respectively. The monolayer graphene cannot protect Cu efficiently from oxidation at 300 °C in air and from electrochemical corrosion in a 0.1 mol/L NaCl solution due to its abundant defects and grain boundaries. The tri-layer graphene effectively increases the oxidation resistance and the electrochemical corrosion resistance. The protective performance of tri-layer graphene for a Cu foil is significantly better than that of monolayer graphene.

通过大气压化学气相沉积法在铜箔上合成了高质量的石墨烯。通过光学显微镜，扫描电子显微镜，高分辨率透射电子显微镜，拉曼光谱，紫外可见光谱和X射线光电子能谱表征了样品的形貌和微观结构。通过电位动力学极化和电化学阻抗谱测试了样品的耐腐蚀性。结果表明，单层和高质量三层石墨烯分别在1 000°C下合成5和15分钟沉积。由于其大量的缺陷和晶界，单层石墨烯无法有效地保护Cu在300°C的空气中氧化和在0.1 mol / L NaCl溶液中的电化学腐蚀。三层石墨烯有效地提高了抗氧化性和耐电化学腐蚀性。三层石墨烯对铜箔的保护性能明显优于单层石墨烯。