Abstract In this article, we have demonstrated a new AlGaN-based D-UV LED (Deep-Ultraviolet Light Emitting Diode) structure and investigated improved electrical output characteristics theoretically. In the new structure, we have used partially graded quantum barriers (PQBs) rather than stepped quantum barrier (SQBs) as setup in conventional LEDs. The simulation results confirm that the usage of PQBs in new D-UV LED structure notably enhances the internal quantum efficiency (IQE), light output power (LOP) or luminous power and enhances power spectral density in the D-UV region. The reason behind this improvement is higher potential barrier for carriers in the active region which helps in improving the carrier's confinement in the quantum wells and favors significant increment in radiative recombination.

中文翻译：

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通过使用部分渐变量子势垒提高基于 AlGaN 的 D-UV LED 的效率和发光功率

摘要 在本文中，我们展示了一种新的基于 AlGaN 的 D-UV LED（深紫外发光二极管）结构，并从理论上研究了改进的电输出特性。在新结构中，我们使用了部分渐变量子势垒 (PQB) 而不是传统 LED 中的阶梯量子势垒 (SQB)。仿真结果证实，在新型 D-UV LED 结构中使用 PQB 显着提高了内量子效率 (IQE)、光输出功率 (LOP) 或发光功率，并提高了 D-UV 区域的功率谱密度。这种改进背后的原因是有源区载流子的势垒更高，这有助于改进载流子在量子阱中的限制，并有利于辐射复合的显着增加。