Gallium oxide (Ga₂O₃) nanostructures (NSs) are grown on Si substrate via vapor-solid (VS) mechanism by the carbon-hydrogen reduction of gallium oxide powder in chemical vapor deposition (CVD) system. The NSs are synthesized at different deposition temperatures of 850–1150 °C with the apparent activation energy of 120.98 kJ/mol(1.24 eV/atom). The crystalline monoclinic phase is confirmed by high-resolution X-ray diffraction (HR-XRD). Field-emission scanning electron microscopy (FE-SEM) revealed that morphology of β-Ga₂O₃ NSs comprises of nanoworms and nanowires. The Williamson-Hall (W–H) and Scherrer method are used to evaluate the size of crystallites and strain in the β-Ga₂O₃ NSs. Crystallite size is observed to increase with deposition temperature as the crystallinity of the films improved. Physical parameters such as strain, root-mean-square strain, dislocation density and texture coefficient values are calculated from the XRD results. Elemental composition investigated by energy dispersive X-ray (EDX) reveal strong peaks of Ga and O without impurities. The photodetection behavior of the material demonstrates remarkable response to 365 nm (2.09 mW/cm²) light.

在化学气相沉积（CVD）系统中，通过氧化镓粉末的碳氢还原，通过汽固（VS）机理在硅衬底上生长了氧化镓（Ga ₂ O ₃）纳米结构（NSs）。NSs是在850-1150°C的不同沉积温度下合成的，其表观活化能为120.98 kJ / mol（1.24 eV /原子）。结晶单斜晶相通过高分辨率X射线衍射（HR-XRD）确认。场发射扫描电子显微镜（FE-SEM）揭示的β-Ga的其形态₂ ö ₃奈米包括纳米蠕虫和纳米线。威廉逊-霍尔（W-H）和谢乐法用于评估微晶的在大小和应变的β-Ga ₂ ö ₃NSs。随着膜的结晶度提高，观察到微晶尺寸随沉积温度而增加。物理参数，如应变，均方根应变，位错密度和织构系数值均根据XRD结果计算得出。通过能量色散X射线（EDX）研究的元素组成显示出Ga和O的强峰，而没有杂质。该材料的光电检测行为显示出对365 nm（2.09 mW / cm ²）光的显着响应。