We present the fabrication and electrical transport characterization of underdoped YBa2Cu3O7-δnanowires. The nanowires have been realized without any protective capping layer and theyshow transport properties similar to those of the parent thin film, demonstrating that they havenot been damaged by the nanopatterning. The current-voltage characteristics of the underdopednanowires show large hysteretic voltage switching at the critical current, in contrast to theflux-flow like characteristics of optimally doped nanostructures, indicating the formation of aself-stabilizing hot spot. These results open up new possibilities for using the underdopednanowires as single photon detectors and for exploring the underdoped side of the YBa2Cu3O7-δphase diagram at the nanoscale.

中文翻译：

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高质量欠掺杂 YBa2Cu3O7-δ 纳米线的制备和电传输表征

我们介绍了低掺杂 YBa2Cu3O7-δ 纳米线的制造和电传输特性。纳米线在没有任何保护性覆盖层的情况下实现，它们显示出与母体薄膜相似的传输特性，表明它们没有被纳米图案损坏。与最佳掺杂纳米结构的类似通量的特性相比，欠掺杂纳米线的电流-电压特性在临界电流处显示出较大的滞后电压切换，表明形成了自稳定热点。这些结果为使用低掺杂纳米线作为单光子探测器和探索纳米级 YBa2Cu3O7-δ 相图的低掺杂侧开辟了新的可能性。