Preparing the thermal-sensitive thin films with high temperature coefficient of resistance (TCR) and low resistivity by a highly compatible process is favorable for increasing the sensitivity of microbolometers with small pixels. Here, we report an effective and process-compatible approach for preparing V1-x-yTixRuyO2 thermal-sensitive thin films with monoclinic structure, high TCR, and low resistivity through a reactive sputtering process followed by annealing in oxygen atmosphere at 400 °C. X-ray photoelectron spectroscopy demonstrates that Ti4+ and Ru4+ ions are combined into VO2. X-ray diffraction, Raman spectroscopy, and transmission electron microscopy reveal that V1-x-yTixRuyO2 thin films have a monoclinic lattice structure as undoped VO2. But V1-x-yTixRuyO2 thin films exhibit no-SMT feature from room temperature (RT) to 106 °C due to the pinning effect of high-concentration Ti in monoclinic lattice. Moreover, RT resistivity of the V0.8163Ti0.165Ru0.0187O2 thin film is only one-eighth of undoped VO2 thin film, and its TCR is as high as 3.47%/°C.

中文翻译：

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具有增强的热敏性能的单斜V1-x-yTixRuyO2薄膜。

通过高度兼容的方法制备具有高电阻温度系数（TCR）和低电阻率的热敏薄膜有利于提高具有小像素的微辐射热计的灵敏度。在这里，我们报告了一种有效且与工艺兼容的方法，该方法可通过反应性溅射工艺制备单斜晶结构，高TCR和低电阻率的V1-x-yTixRuyO2热敏薄膜，然后在400°C的氧气气氛中进行退火。X射线光电子能谱显示Ti4 +和Ru4 +离子结合成VO2。X射线衍射，拉曼光谱和透射电子显微镜表明，V1-x-yTixRuyO2薄膜具有单斜晶格结构，即未掺杂的VO2。但是由于高浓度Ti在单斜晶格中的钉扎效应，V1-x-yTixRuyO2薄膜从室温（RT）到106°C都没有SMT特征。此外，V0.8163Ti0.165Ru0.0187O2薄膜的RT电阻率仅为未掺杂VO2薄膜的八分之一，其TCR高达3.47％/°C。