Films of α-Ga2O3 doped with Sn were grown by halide vapor phase epitaxy (HVPE) on planar and patterned sapphire substrates. For planar substrates, with the same high Sn flow, the total concentration of donors was varying from 1017 cm−3 to high 1018 cm−3. The donor centers were shallow states with activation energies 35–60 meV, centers with levels near Ec–(0.1–0.14) eV (E1), and centers with levels near Ec–(0.35–0.4) eV (E2). Deeper electron traps with levels near Ec−0.6 eV (A), near Ec−0.8 eV (B), Ec−1 eV (C) were detected in capacitance or current transient spectroscopy measurements. Annealing of heavily compensated films in molecular hydrogen flow at 500 °C for 0.5 h strongly increased the concentration of the E1 states and increased the density of the E2 and A traps. For films grown on patterned substrates the growth started by the formation of the orthorhombic α-phase in the valleys of the sapphire pattern that was overgrown by the regions of laterally propagating α-phase. No improvement of the crystalline quality of the layers when using patterned substrates was detected. The electric properties, the deep traps spectra, and the effects of hydrogen treatment were similar to the case of planar samples.

中文翻译：

---

编辑推荐——通过卤化物气相外延在蓝宝石上生长的 α-Ga2O3:Sn 薄膜中的电学特性和深陷阱

通过卤化物气相外延 (HVPE) 在平面和图案化蓝宝石衬底上生长掺杂有 Sn 的 α-Ga2O3 薄膜。对于平面基板，在同样高的 Sn 流量下，施主的总浓度从 1017 cm-3 到 1018 cm-3 不等。供体中心是活化能为 35-60 meV 的浅态，能级接近 Ec-(0.1-0.14) eV (E1) 的中心，以及能级接近 Ec-(0.35-0.4) eV (E2) 的中心。在电容或电流瞬态光谱测量中检测到水平接近 Ec-0.6 eV (A)、接近 Ec-0.8 eV (B)、Ec-1 eV (C) 的更深电子陷阱。在 500 °C 的分子氢流中对重度补偿薄膜进行 0.5 小时的退火会大大增加 E1 态的浓度并增加 E2 和 A 陷阱的密度。对于在图案化衬底上生长的薄膜，生长开始于在蓝宝石图案的谷中形成斜方晶 α 相，该谷被横向传播的 α 相区域过度生长。当使用图案化衬底时，未检测到层的结晶质量的改善。电特性、深陷阱光谱和氢处理的效果与平面样品的情况相似。