This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state changes of InGaZnO ReRAM devices with high voltage stress over 0.6 V because of thermal energy in conducting filament. In addition, SPICE simulation was conducted with verilog-A to verify this retention fail mechanism. We believe these results are potentially useful to the analysis on the retention fail properties of ReRAM devices as well as the system-level simulations with reliability-awareness.

中文翻译：

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基于 InGaZnO 阻变随机存取存储器中焦耳热效应的 LRS 保留失败

本研究报告了 InGaZnO 电阻切换随机存取存储器 (ReRAM) 在恒定直流偏置应力条件下通过焦耳热效应导致的低电阻状态保持失败。由于导电灯丝中的热能，InGaZnO ReRAM 器件在超过 0.6 V 的高压应力下会发生突然的状态变化。此外，使用 verilog-A 进行 SPICE 仿真以验证这种保留失败机制。我们相信这些结果对于分析 ReRAM 器件的保持失效特性以及具有可靠性意识的系统级模拟可能有用。