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Analyses of hyperspectral imaging microscopy data sets of semiconducting 2D materials
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-04-22 , DOI: 10.35848/1882-0786/ab88c7
Xingchen Dong , Ali K. Yetisen , Heng Tian , Jie Dong , Michael H. Köhler , Martin Jakobi , Alexander W. Koch

The unique optical properties of two-dimensional (2D) materials are largely dependent on the number of atomic layers. Hyperspectral imaging microscopy shows large potential for rapid and accurate thickness mapping. To process the acquired hyperspectral data set and to deal with pixel-level spectra remain a challenge for further application. In this work, two quantitative classification strategies including linear unmixing and spectral peak mapping were conducted to characterize a multilayer semiconducting MoS 2 flake with nanoscale thickness variations. The comparative study paves the way to identify 2D semiconducting materials with random layer numbers (monolayer, bilayer, and few-layer) in both laboratory and industry.

中文翻译:

半导体2D材料的高光谱成像显微镜数据集分析

二维(2D)材料的独特光学特性在很大程度上取决于原子层的数量。高光谱成像显微镜显示出快速而准确的厚度映射的巨大潜力。处理采集的高光谱数据集并处理像素级光谱仍然是进一步应用的挑战。在这项工作中,进行了两种定量分类策略,包括线性解混和光谱峰映射,以表征具有纳米级厚度变化的多层半导体MoS 2薄片。这项比较研究为鉴定实验室和工业中具有随机层数(单层,双层和几层)的二维半导体材料铺平了道路。
更新日期:2020-04-23
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