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Effects of rapid thermal annealing on wide band gap tungsten oxide films
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.spmi.2020.106541 Man Jiang , Guanguang Zhang , Conghao Li , Jinxiang Liu , Kaiyue Guo , Honglong Ning , Muyang Shi , Dong Guo , Rihui Yao , Junbiao Peng
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.spmi.2020.106541 Man Jiang , Guanguang Zhang , Conghao Li , Jinxiang Liu , Kaiyue Guo , Honglong Ning , Muyang Shi , Dong Guo , Rihui Yao , Junbiao Peng
Abstract The effects of rapid thermal annealing (RTA) on wide band gap tungsten oxide films were studied. We used ammonium meta-tungstate and citric acid to prepare precursor solution. The film formation was good when molar ratio of ammonium meta-tungstate to citric acid was 9:20 observed by optical microscope. FT-IR showed that critical temperature for conversion of precursors to tungsten oxide was approximately 350 °C. Film roughness measured by AFM kept at a low level (
中文翻译：
快速热退火对宽带隙氧化钨薄膜的影响
摘要 研究了快速热退火（RTA）对宽带隙氧化钨薄膜的影响。我们使用偏钨酸铵和柠檬酸来制备前体溶液。光学显微镜观察偏钨酸铵与柠檬酸的摩尔比为9:20时成膜良好。FT-IR 显示前体转化为氧化钨的临界温度约为 350 °C。AFM 测量的薄膜粗糙度保持在较低水平（
更新日期：2020-06-01
中文翻译：
快速热退火对宽带隙氧化钨薄膜的影响
摘要 研究了快速热退火（RTA）对宽带隙氧化钨薄膜的影响。我们使用偏钨酸铵和柠檬酸来制备前体溶液。光学显微镜观察偏钨酸铵与柠檬酸的摩尔比为9:20时成膜良好。FT-IR 显示前体转化为氧化钨的临界温度约为 350 °C。AFM 测量的薄膜粗糙度保持在较低水平（
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