当前位置: X-MOL 学术Int. J. Electron. Commun. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Design of reconfigurable multi-band low-noise amplifiers for 802.11ah/b/g and DCS-1800 applications
AEU - International Journal of Electronics and Communications ( IF 3.2 ) Pub Date : 2020-04-23 , DOI: 10.1016/j.aeue.2020.153201
Rajani Bisht , M.J. Akhtar , S. Qureshi

In this paper two reconfigurable multi band low-noise amplifiers, namely LNA1 for 802.11ah/b/g and LNA2 for 802.11ah/b/g, DCS-1800 applications using tank circuits are presented. Dual feedback is used to achieve multi band operation in both the LNAs. Power dissipation of the LNAs is reduced by employing current-reuse and forward body-biasing in the first stage of the LNAs. The novelty of the proposed approach lies in the fact that the reconfigurability of the LNAs for multi bands is achieved using simple tank circuits without requiring any additional biasing arrangement. The LNAs are designed using UMC 180 nm RFCMOS process. The post layout simulation results of LNA1 showed a power gain of 9.3 dB with noise figure of 3.7 dB, IIP3 of −2.19 dBm, DC power dissipation of 16.5 mW at 900 MHz and a power gain of 10.6 dB, noise figure of 3.1 dB, IIP3 of −2.7 dBm at 2.4 GHz. In LNA2 one common-source stage is added for further gain improvement and one more tank circuit is added to operate it additionally in GSM band, namely DCS-1800. Post layout simulation of LNA2 showed a power gain of 16.1 dB with noise figure of 4.6 dB, IIP3 of −6.57 dBm, DC power dissipation of 24.9 mW at 900 MHz; a power gain of 14.7 dB with noise figure of 5.4 dB, IIP3 of −4.34 dBm at 1.8 GHz and a power gain of 16.2 dB, noise figure of 3.6 dB, IIP3 of 0.57 dBm at 2.4 GHz.



中文翻译:

用于802.11ah / b / g和DCS-1800应用的可重配置多频带低噪声放大器的设计

本文介绍了两个可重构的多频带低噪声放大器,分别是用于802.11ah / b / g的LNA1和用于802.11ah / b / g的LNA2,以及使用储能电路的DCS-1800应用。双反馈用于在两个LNA中实现多频段操作。通过在LNA的第一阶段采用电流重用和正向偏置,可以降低LNA的功耗。所提出的方法的新颖性在于以下事实:使用简单的振荡电路即可实现用于多频带的LNA的可重构性,而无需任何额外的偏置装置。LNA是使用UMC 180 nm RFCMOS工艺设计的。LNA1的布局后仿真结果显示,功率增益为9.3 dB,噪声系数为3.7 dB,IIP3为-2.19 dBm,900 MHz时的DC功耗为16.5 mW,功率增益为10.6 dB,噪声系数为3.1 dB,在2.4 GHz时为-2.7 dBm的IIP3。在LNA2中,增加了一个共源级以进一步提高增益,并增加了一个储能电路以使其在GSM频段中额外运行,即DCS-1800。LNA2的布局后仿真显示,功率增益为16.1 dB,噪声系数为4.6 dB,IIP3为-6.57 dBm,900 MHz时的直流功耗为24.9 mW。功率增益为14.7 dB,噪声系数为5.4 dB,在1.8 GHz时IIP3为-4.34 dBm,功率增益为16.2 dB,噪声系数为3.6 dB,IIP3在2.4 GHz时为0.57 dBm。

更新日期:2020-04-23
down
wechat
bug