Aminophosphine precursors were used to synthesize copper-doped indium phosphide nanocrystals (InP NCs) via direct doping in a slow-injection bottom-up method and postsynthetic cation exchange. By both methods, the amount of copper incorporated into the NCs could be tuned simply by varying the molar ratio during synthesis. Common postsynthetic surface modifications such as Lewis acid treatment and zinc chalcogenide shelling were performed on these samples, resulting in an enhancement of the copper-based emission from 10% to 40%. For samples with thick shells, the copper-based photoluminescence quantum yield reached over 60%, a record value for doped InP NCs. Time-resolved photoluminescence spectroscopy showed increasing carrier lifetimes after surface treatments concurrent with the disappearance of a 2 ns decay process previously attributed to surface trapping in native InP NCs, showing the broad applicability and consistent impacts of the surface treatments. In this way, we have successfully developed a route to obtain high-quality near-infrared emitters utilizing less toxic alternatives to the popular lead- and cadmium-containing materials.

中文翻译：

---

表面修饰的掺杂铜的磷化铟铟纳米晶体的合成与光谱学

通过慢速注入自下而上方法和后合成阳离子交换，将氨基膦前体用于合成掺杂铜的磷化铟纳米晶体（InP NCs）。通过这两种方法，可以简单地通过改变合成过程中的摩尔比来调节掺入NC中的铜量。对这些样品进行了常见的合成后表面改性，例如路易斯酸处理和硫属锌化物脱壳，从而使铜基排放量从10％提高到40％。对于具有厚壳的样品，铜基光致发光量子产率达到60％以上，这是掺杂InP NC的创纪录值。时间分辨的光致发光光谱显示表面处理后的载流子寿命增加，而先前归因于天然InP NC中表面俘获的2 ns衰减过程消失，显示了表面处理的广泛适用性和一致的影响。通过这种方式，我们已经成功地开发了一种途径，可以利用毒性较小的替代品来替代高质量的含铅和镉的材料，从而获得高质量的近红外发射器。