Seeded ammonothermal growths of a few-mm-thick GaN crystals on a 2 inch diameter c-plane and a 45 mm long m-plane GaN wafers were carried out by using an NH4F mineralizer in a 60 mm diameter Ag-lined autoclave. As a result of dynamic control of the temperature profile, low dislocation density and nearly bowing-free m-plane GaN was grown: i.e. the full-width at half-maximum values for the X-ray rocking curves of the 10 2 reflections were smaller than 28 arcsec and the radius of curvature was estimated to be 1460 m. In addition, its low temperature photoluminescence spectrum exhibited free and neutral donor-bound exciton emission peaks.

中文翻译：

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在 Ag 衬里高压釜中使用酸性 NH ₄ F 矿化剂氨热生长 2 英寸长的 GaN 单晶

通过在 60 毫米直径的银衬里高压釜中使用 NH4F 矿化剂，在 2 英寸直径的 c 平面和 45 毫米长的 m 平面 GaN 晶片上进行了几毫米厚的 GaN 晶体的种子氨热生长。由于温度分布的动态控制，低位错密度和几乎无弯曲的 m 面 GaN 得到生长：即 10 2 次反射的 X 射线摇摆曲线的半高全宽值更小超过 28 弧秒，曲率半径估计为 1460 m。此外，其低温光致发光光谱表现出自由和中性的供体结合激子发射峰。