Abstract A short-wavelength infrared InAs/AlSb type-II superlattice photodetector has been modeled with 15 Mono Layer (ML) of InAs and 4 Mono Layer (ML) of AlSb. In this work, the Empirical Tight-Binding Method (ETBM) was used to calculate the band structure and predict the material of the interfaces. In addition, the effective mass of the heavy hole, light hole, and electron was calculated for each type of the interfaces by tight binding s p 3 s ∗ modeling. Based on the results, the material of the interfaces plays a critical role in lattice mismatch and cutoff wavelength. The detector cutoff wavelength can be changed by atomic engineering of the superlattice interfaces and changing the thicknesses of InAs and AlSb. The simulation results are in good agreement with the experimental values and prove that the [ ( I n A s ) 15 − I n S b − ( A l S b ) 4 − A l A s ] is the most suitable structure. In order to match the simulation results with experimental results, the effect of the segregation on the band structure was evaluated. In this case, the cutoff wavelength of the SWIR detector is 3.27 μ m and the lattice mismatch between the superlattice and the GaSb (100) substrate is 0.63%.

中文翻译：

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使用 ETBM 和界面工程对 SWIR II 型 InAs/AlSb 超晶格进行建模

摘要 用 15 个单层 (ML) 的 InAs 和 4 个单层 (ML) 的 AlSb 对短波长红外 InAs/AlSb II 型超晶格光电探测器进行建模。在这项工作中，使用经验紧密结合方法 (ETBM) 来计算能带结构并预测界面的材料。此外，通过紧束缚 sp 3 s ∗ 模型计算了每种界面的重空穴、轻空穴和电子的有效质量。根据结果​​，界面材料在晶格失配和截止波长方面起着关键作用。检测器截止波长可以通过超晶格界面的原子工程和改变 InAs 和 AlSb 的厚度来改变。模拟结果与实验值吻合良好，证明[(I n A s ) 15 − I n S b - (A l S b ) 4 − A l A s ]是最合适的结构。为了将模拟结果与实验结果相匹配，评估了偏析对能带结构的影响。在这种情况下，SWIR 探测器的截止波长为 3.27 μm，超晶格与 GaSb (100) 衬底之间的晶格失配为 0.63%。