当前位置: X-MOL 学术Results Phys. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Optoelectronic properties of electron beam-deposited NiOx thin films for solar cell application
Results in Physics ( IF 4.4 ) Pub Date : 2020-04-21 , DOI: 10.1016/j.rinp.2020.103122
A.K. Mahmud Hasan , K. Sobayel , Itaru Raifuku , Yasuaki Ishikawa , Md. Shahiduzzaman , Majid Nour , Hatem Sindi , Hazim Moria , Muhyaddin Rawa , K. Sopian , N. Amin , Md. Akhtaruzzaman

The fabrication of highly efficient nickel oxide (NiOx) thin film for optoelectronic devices is a challenging task because optoelectronic properties are considerably influenced by deposition technique and film thickness. The effect of thickness on the film properties of electron beam–physical vapour-deposited NiOx thin film has been investigated in this work. The influence of post-annealing treatment on the optoelectronic properties of the film was compared with that of the as-deposited one. Optical transparency gradually decreased upon the successive increment in thickness of the as-deposited and annealed films. The surface roughness of as-deposited films increased linearly with the increase in film thickness, but this behaviour was altered in post-annealed films. Spherical grains with high packing density were observed on the as-deposited films, but the grain size was altered substantially on the post-annealed films. The annealed films presented a higher work function than their corresponding as-deposited films. This work presents important insights into the design of photovoltaic devices with an effective deposition process, including a high material utilisation. Moreover, an attempt of fabricating inverted perovskite solar cell on as-deposited and annealing NiOx film as hole transporting material exhibited power conversion efficiency of 11.98% and 12.28%, individually. It was noticed that the high temperature annealing on NiOx film had a very little impact on the comparative photovoltaic performance of aforementioned PSC devices.



中文翻译:

电子束沉积NiOx薄膜在太阳能电池中的光电性能

用于光电器件的高效氧化镍(NiOx)薄膜的制造是一项艰巨的任务,因为光电性能受沉积技术和薄膜厚度的影响很大。在这项工作中,已经研究了厚度对电子束物理气相沉积NiOx薄膜的膜性能的影响。将退火后处理对薄膜的光电性能的影响与沉积时的相比。随着沉积和退火膜厚度的连续增加,光学透明度逐渐降低。沉积薄膜的表面粗糙度随薄膜厚度的增加而线性增加,但这种行为在后退火薄膜中有所改变。在沉积的薄膜上观察到具有高堆积密度的球形晶粒,但是在退火后的薄膜上晶粒尺寸发生了很大变化。退火后的薄膜比其相应的沉积薄膜具有更高的功函。这项工作为采用有效沉积工艺(包括高材料利用率)的光伏器件设计提供了重要的见识。此外,在沉积的NiOx膜上进行倒钙钛矿型太阳能电池的制备并作为空穴传输材料进行退火的尝试分别显示出功率转换效率为11.98%和12.28%。注意到在NiOx膜上的高温退火对上述PSC器件的比较光伏性能几乎没有影响。退火后的薄膜比其相应的沉积薄膜具有更高的功函。这项工作为采用有效沉积工艺(包括高材料利用率)的光伏器件设计提供了重要的见识。此外,在沉积的NiOx膜上进行倒钙钛矿型太阳能电池的制备并作为空穴传输材料进行退火的尝试分别显示出功率转换效率为11.98%和12.28%。注意到在NiOx膜上的高温退火对上述PSC器件的比较光伏性能几乎没有影响。退火后的薄膜比其相应的沉积薄膜具有更高的功函。这项工作为采用有效沉积工艺(包括高材料利用率)的光伏器件设计提供了重要的见识。此外,在沉积的NiOx膜上进行倒钙钛矿型太阳能电池的制备并作为空穴传输材料进行退火的尝试分别显示出功率转换效率为11.98%和12.28%。注意到在NiOx膜上的高温退火对上述PSC器件的比较光伏性能几乎没有影响。尝试在沉积的NiOx薄膜上退火制成钙钛矿型太阳能电池并进行退火作为空穴传输材料时,其功率转换效率分别为11.98%和12.28%。注意到在NiOx膜上的高温退火对上述PSC器件的比较光伏性能几乎没有影响。尝试在沉积的NiOx薄膜上退火制成钙钛矿型太阳能电池并进行退火作为空穴传输材料时,其功率转换效率分别为11.98%和12.28%。注意到在NiOx膜上的高温退火对上述PSC器件的比较光伏性能几乎没有影响。

更新日期:2020-04-21
down
wechat
bug