Polycrystalline HfO₂ dielectrics grown on (−2 0 1) beta-gallium oxide (β-Ga₂O₃) using high temperature ALD process is investigated. A low capacitance–voltage (C-V) hysteresis of <60 mV is obtained, and the high quality interface is verified via the temperature-dependent C-V characterizations, showing low interface trap density (D_it < 1.3 × 10¹² cm⁻²eV⁻¹) distributions over the extended energy range. The proposed polycrystalline HfO₂/(−2 0 1) β-Ga₂O₃ MOS structure can be an attractive candidate for β-Ga₂O₃ based MOSFET devices.

中文翻译：

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ALD生长的多晶的HfO ₂上（-2 0 1）的β-Ga介电层₂ ö ₃为MOS电容器

多晶的HfO _2种介质上生长的（-2 0 1）的β-氧化镓（的β-Ga ₂ ö ₃使用高温ALD工艺）进行了研究。获得了小于60 mV的低电容-电压（CV）磁滞，并且通过与温度相关的CV特性验证了高质量的界面，显示出低的界面陷阱密度（D _it  <1.3×10 ¹²  cm ^-2 eV ^-1）在扩展的能量范围内分布。所提出的多晶的HfO ₂ /（ - 2 0 1）的β-Ga ₂ ö ₃ MOS结构可以是用于的β-Ga一个有吸引力的候选者₂ ö ₃基于MOSFET器件。