Results in Physics ( IF 4.4 ) Pub Date : 2020-04-20 , DOI: 10.1016/j.rinp.2020.103119 J.Y. Yang , J. Ma , G. Yoo
Polycrystalline HfO2 dielectrics grown on (−2 0 1) beta-gallium oxide (β-Ga2O3) using high temperature ALD process is investigated. A low capacitance–voltage (C-V) hysteresis of <60 mV is obtained, and the high quality interface is verified via the temperature-dependent C-V characterizations, showing low interface trap density (Dit < 1.3 × 1012 cm−2eV−1) distributions over the extended energy range. The proposed polycrystalline HfO2/(−2 0 1) β-Ga2O3 MOS structure can be an attractive candidate for β-Ga2O3 based MOSFET devices.
中文翻译:
ALD生长的多晶的HfO 2上(-2 0 1)的β-Ga介电层2 ö 3为MOS电容器
多晶的HfO 2种介质上生长的(-2 0 1)的β-氧化镓(的β-Ga 2 ö 3使用高温ALD工艺)进行了研究。获得了小于60 mV的低电容-电压(CV)磁滞,并且通过与温度相关的CV特性验证了高质量的界面,显示出低的界面陷阱密度(D it <1.3×10 12 cm -2 eV -1)在扩展的能量范围内分布。所提出的多晶的HfO 2 /( - 2 0 1)的β-Ga 2 ö 3 MOS结构可以是用于的β-Ga一个有吸引力的候选者2 ö 3基于MOSFET器件。