Abstract Amorphous Sm–Co films with uniaxial in-plane anisotropy have great potential for application in information-storage media and spintronic materials. The most effective method to produce uniaxial in-plane anisotropy is to apply an in-plane magnetic field during deposition. However, this method inevitably requires more complex equipment. Here, we report a new way to produce uniaxial in-plane anisotropy by growing amorphous Sm–Co films onto (011)-cut single-crystal substrates in the absence of an external magnetic field. The tunable anisotropy constant, kA, is demonstrated with variation in the lattice parameter of the substrates. A kA value as high as about 3.3 × 104 J·m−3 was obtained in the amorphous Sm–Co film grown on a LaAlO3(011) substrate. Detailed analysis indicated that the preferential seeding and growth of ferromagnetic (FM) domains caused by the anisotropic strain of the substrates, along with the formed Sm–Co, Co–Co directional pair ordering, exert a substantial effect. This work provides a new way to obtain in-plane anisotropy in amorphous Sm–Co films.

中文翻译：

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在 (011) 取向的单晶基板上生长的非晶 Sm-Co 薄膜中的可调平面内各向异性

摘要 具有单轴面内各向异性的非晶 Sm-Co 薄膜在信息存储介质和自旋电子材料方面具有巨大的应用潜力。产生单轴面内各向异性的最有效方法是在沉积过程中施加面内磁场。然而，这种方法不可避免地需要更复杂的设备。在这里，我们报告了一种通过在没有外部磁场的情况下在（011）切割的单晶基板上生长非晶 Sm-Co 薄膜来产生单轴面内各向异性的新方法。可调谐各向异性常数 kA 随基板晶格参数的变化而变化。在 LaAlO3(011) 衬底上生长的非晶 Sm-Co 膜中获得了高达约 3.3 × 104 J·m-3 的 kA 值。详细分析表明，由基材的各向异性应变引起的铁磁 (FM) 畴的优先接种和生长，以及形成的 Sm-Co、Co-Co 定向对排序，产生了实质性的影响。这项工作提供了一种在非晶 Sm-Co 薄膜中获得面内各向异性的新方法。