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Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications
Microsystems & Nanoengineering ( IF 7.3 ) Pub Date : 2020-04-20 , DOI: 10.1038/s41378-019-0128-4
Xuge Fan 1 , Anderson D Smith 2 , Fredrik Forsberg 1 , Stefan Wagner 3 , Stephan Schröder 1 , Sayedeh Shirin Afyouni Akbari 4 , Andreas C Fischer 1, 5 , Luis Guillermo Villanueva 4 , Mikael Östling 2 , Max C Lemme 3, 6 , Frank Niklaus 1
Affiliation  

Graphene’s unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 µm to 110 µm, and suspended proof masses consisting of solid silicon cubes that are from 5 µm × 5 µm × 16.4 µm to 100 µm × 100 µm × 16.4 µm in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were >90%, with >70% of the graphene membranes having >90% graphene area without visible defects. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The graphene membranes with suspended proof masses were extremely robust, and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to ~7000 nN. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances.



中文翻译:

用于 MEMS 和 NEMS 应用的具有悬浮硅质量块的石墨烯膜的制造和表征

石墨烯无与伦比的强度、化学稳定性、最终的表面积与体积比和优异的电子特性使其成为微和纳米机电系统(MEMS 和 NEMS)中膜材料的理想候选者。然而,将石墨烯集成到 MEMS 或 NEMS 设备和悬浮结构(例如石墨烯膜上的质量块)提出了一些技术挑战,包括石墨烯的坍塌和破裂。我们已经开发出一种可靠的途径来实现由双层 CVD 石墨烯制成的膜,并以高产率将大的硅质量悬浮在膜上。我们已经展示了边长为 7 µm 至 110 µm 的方形石墨烯膜的制造,以及由 5 µm × 5 µm × 16.4 µm 至 100 µm × 100 µm × 16 的固体硅立方体组成的悬浮质量块。4 µm 大小。我们的方法与晶圆级 MEMS 和半导体制造技术兼容,具有悬浮质量块的石墨烯膜的制造良率 >90%,其中 >70% 的石墨烯膜具有 >90% 的石墨烯面积而没有可见缺陷。所实现结构的测量共振频率范围为数十至数百 kHz,品质因数范围为 63 至 148。带有悬浮质量块的石墨烯膜非常坚固,能够承受原子力显微镜 (AFM) 的压痕力) 尖端高达 ~7000 nN。用于可靠和大规模制造具有悬浮质量块的石墨烯膜的拟议方法将使具有新功能和改进性能的创新 NEMS 设备的开发和研究成为可能。我们的方法与晶圆级 MEMS 和半导体制造技术兼容,具有悬浮质量块的石墨烯膜的制造良率 >90%,其中 >70% 的石墨烯膜具有 >90% 的石墨烯面积而没有可见缺陷。所实现结构的测量共振频率范围从数十到数百 kHz,品质因数范围从 63 到 148。带有悬浮质量块的石墨烯膜非常坚固,能够承受来自原子力显微镜 (AFM) 的压痕力) 尖端高达 ~7000 nN。用于可靠和大规模制造具有悬浮质量块的石墨烯膜的拟议方法将使具有新功能和改进性能的创新 NEMS 设备的开发和研究成为可能。我们的方法与晶圆级 MEMS 和半导体制造技术兼容,具有悬浮质量块的石墨烯膜的制造良率 >90%,其中 >70% 的石墨烯膜具有 >90% 的石墨烯面积而没有可见缺陷。所实现结构的测量共振频率范围从数十到数百 kHz,品质因数范围从 63 到 148。带有悬浮质量块的石墨烯膜非常坚固,能够承受来自原子力显微镜 (AFM) 的压痕力) 尖端高达 ~7000 nN。用于可靠和大规模制造具有悬浮质量块的石墨烯膜的拟议方法将使具有新功能和改进性能的创新 NEMS 设备的开发和研究成为可能。

更新日期:2020-04-24
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