Electrically and optically pumped spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs) seem to attain improved performance compared to their conventional counterparts. Their dynamical properties are studied mostly in the framework of effective rate equations containing parameters that are difficult to directly relate with fundamental material properties. Consequently, such approaches are not suitable for the precise design and optimization of future spin-lasers with desirable dynamical properties. We propose a method for extraction of dynamics-related parameters for the spin-flip model, which is widely used for the description of spin-laser dynamics. This method is based on the correspondence between robust local computational tools and effective models. A general matrix formalism based on S-matrices and generalized Maxwell–Bloch equations is used to determine approximate values of parameters such as cavity decay rate or birefringence rate. This would allow us to tune laser properties by changing the optical properties of the laser cavities and active media according to our needs. The method is demonstrated on realistic anisotropic spin-VCSEL structures containing a 12-quantum-well InGaAs/GaAsP active region. The potential limitations of already existing effective models are discussed.

中文翻译：

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用于模拟半导体自旋激光器的局部和平均场方法

与传统对应物相比，电和光泵浦自旋极化垂直腔面发射激光器（自旋 VCSEL）似乎获得了更高的性能。它们的动力学特性主要在有效速率方程的框架内进行研究，这些方程包含难以与基本材料特性直接相关的参数。因此，这种方法不适合未来具有理想动力学特性的自旋激光器的精确设计和优化。我们提出了一种为自旋翻转模型提取动力学相关参数的方法，该方法广泛用于描述自旋激光动力学。该方法基于稳健的本地计算工具和有效模型之间的对应关系。基于 S 矩阵和广义 Maxwell-Bloch 方程的通用矩阵形式用于确定参数的近似值，例如腔衰减率或双折射率。这将使我们能够根据需要通过改变激光腔和活性介质的光学特性来调整激光特性。该方法在包含 12 量子阱 InGaAs/GaAsP 有源区的真实各向异性自旋 VCSEL 结构上进行了演示。讨论了现有有效模型的潜在局限性。该方法在包含 12 量子阱 InGaAs/GaAsP 有源区的真实各向异性自旋 VCSEL 结构上进行了演示。讨论了现有有效模型的潜在局限性。该方法在包含 12 量子阱 InGaAs/GaAsP 有源区的真实各向异性自旋 VCSEL 结构上进行了演示。讨论了现有有效模型的潜在局限性。