Abstract Single bilayer (1BL) of TiO2/Al2O3 nanolaminate films were grown on n-Si (100) and glass substrates via Atomic Layer Deposition technique. Films were deposited using tetrakis (dimethylamino)titanium(IV), trimethylaluminum and water vapor as precursors at a reactor temperature of 200 °C. Post deposition annealing was performed on the grown nanolaminate films in a wide variable temperature range (300–1100 °C) to investigate evolution of crystal properties in detail. The films were studied with grazing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM), and UV–Vis spectroscopy. Crystal structures of the films revealed different combinations of three phases that belong to TiO2. Phase transformations of TiO2 and Al2O3 were determined as a result of annealing. Atomic force microscopy images together with roughness values of TiO2/Al2O3 nanolaminate films showed a trend associated with crystal structure changes. Optical measurements revealed that the indirect band gap of films which produced on glass substrate decreased with respect to bulk TiO2 and prior reports.

中文翻译：

---

ALD制备的TiO2/Al2O3双层薄膜的特性演变：基材类型和宽范围退火温度的影响

摘要 通过原子层沉积技术在 n-Si (100) 和玻璃基板上生长单双层 (1BL) TiO2/Al2O3 纳米层压薄膜。使用四（二甲氨基）钛（IV）、三甲基铝和水蒸气作为前体在 200°C 的反应器温度下沉积薄膜。在较宽的可变温度范围 (300–1100 °C) 内对生长的纳米层压薄膜进行沉积后退火，以详细研究晶体特性的演变。用掠入射 X 射线衍射 (GIXRD)、原子力显微镜 (AFM) 和 UV-Vis 光谱研究薄膜。薄膜的晶体结构揭示了属于 TiO2 的三相的不同组合。TiO2 和Al2O3 的相变是通过退火确定的。原子力显微镜图像以及 TiO2/Al2O3 纳米层压薄膜的粗糙度值显示出与晶体结构变化相关的趋势。光学测量表明，相对于体相 TiO2 和先前的报道，在玻璃基板上生产的薄膜的间接带隙减小。